Optical elements

TWO-ELEMENT SILICON PHOTODIODE PD296М.1

Art: FD296M.1

Designed for control and orientation systems.

Photoelectronic module FEM8M based on a matrix of CdHgTe photodiodes

Art: FEM8M

Designed for use in highly sensitive scanning thermal imaging and thermal direction finding systems for medicine, geological prospecting, meteorological monitoring, etc.

Silicon p-i-n photodiode FD342

Art: FD342

The photodiode is designed for use as a highly sensitive fast-response infrared photodetector as part of various-purpose optoelectronic equipment.

MATRIX PHOTO RECEIVING MODULE BASED ON COOLING PHOTODIODE MATRIX MADE OF INDIUM ANTIMONIDE PRM17М

Art: FEM17M

Designed for no-scanner infrared imaging systems at  spectral range 3 – 5 microne.

ONE-PLATFORM PHOTODETECTOR BASED ON PHOTODIODE MADE OF MERCURY-CADMIUM-TELLURIDE ALLOY PUO-115

Art: FUO-115

Designed  to register IR- rays in spectral range 2-15 microne.